2sc5200/fjl4315 ? npn epit axial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. c 1 january 2009 2sc5200/fjl4315 npn epitaxial silicon transistor applications ? high-fidelity audio output amplifier ? general purpose power amplifier features ? high current capability: i c = 17a. ? high power dissipation : 150watts. ? high frequency : 30mhz. ? high voltage : v ceo =250v ? wide s.o.a for reliable operation. ? excellent gain linearity for low thd. ? complement to 2sa1943/fjl4215 . ? thermal and electrical sp ice models are available. ? same transistor is also available in: -- to3p package, 2sc5242/fja4313 : 130 watts -- to220 package, fjp5200 : 80 watts -- to220f package, fjpf5200 : 50 watts absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics* t a =25 c unless otherwise noted * device mounted on minimum pad size h fe classification symbol parameter ratings units bv cbo collector-base voltage 250 v bv ceo collector-emitter voltage 250 v bv ebo emitter-base voltage 5 v i c collector current(dc) 17 a i b base current 1.5 a p d total device dissipation(t c =25 c ) derate above 25 c 150 1.04 w w/ c t j , t stg junction and storage temperature - 50 ~ +150 c symbol parameter max. units r jc thermal resistance, junction to case 0.83 c/w classification r o h fe1 55 ~ 110 80 ~ 160 1.base 2.collector 3.emitter 1 to-264
2sc5200/fjl4315 ? npn epit axial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. c 2 electrical characteristics* t a =25 c unless otherwise noted * pulse test: pulse width=20 s, duty cycle 2% ordering information symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =5ma, i e =0 250 v bv ceo collector-emitter breakdown voltage i c =10ma, r be = 250 v bv ebo emitter-base breakdown voltage i e =5ma, i c =0 5 v i cbo collector cut-off current v cb =230v, i e =0 5.0 a i ebo emitter cut-off current v eb =5v, i c =0 5.0 a h fe1 dc current gain v ce =5v, i c =1a 55 160 h fe2 dc current gain v ce =5v, i c =7a 35 60 v ce (sat) collector-emitter saturation voltage i c =8a, i b =0.8a 0.4 3.0 v v be (on) base-emitter on voltage v ce =5v, i c =7a 1.0 1.5 v f t current gain bandwidth product v ce =5v, i c =1a 30 mhz c ob output capacitance v cb =10v, f=1mhz 200 pf part number marking package packing method remarks 2sc5200rtu c5200r to-264 tube hfe1 r grade 2sc5200otu c5200o to-264 tube hfe1 o grade fjl4315rtu j4315r to-264 tube hfe1 r grade fjl4315otu j4315o to-264 tube hfe1 o grade
2sc5200/fjl4315 ? npn epit axial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. c 3 typical characteristics figure 1. static characteristic figure 2. dc current gain ( r grade ) figure 3. dc current gain ( o grade ) figure 4. collector-emitter saturation voltage figure 5. base-emitter on voltage figure 6. base-emitter saturation voltage 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 i b = 0 i b =200ma i b = 120ma i b = 140ma i b = 160ma i b = 180ma i b = 100ma i b = 60ma i b = 80ma i b = 40ma i c [a], collector current v ce [v], collector-emitter voltage 110 1 10 100 vce=5v tj=-25 o c tj=25 o c tj=125 o c h fe , dc current gain ic[a], collector current 110 1 10 100 vce=5v tj=-25 o c tj=25 o c tj=125 o c h fe , dc current gain ic[a], collector current 0.1 1 10 1 10 100 1000 10000 ic=10ib tj=-25 o c tj=25 o c tj=125 o c vce(sat)[mv], saturation voltage ic[a], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 12 v ce = 5v i c [a], collector current v be [v], base-emitter voltage 0.1 1 10 100 1000 10000 ic=10ib tj=-25 o c tj=25 o c tj=125 o c vbe(sat)[mv], saturation voltage ic[a], collector current
2sc5200/fjl4315 ? npn epit axial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. c 4 typical characteristics figure 7. power derating figure 8. safe operating area figure 9. power derating 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 transient thermal resistance, r thjc [ o c / w] pulse duration [sec] 110100 0.01 0.1 1 10 100 *single nonrepetitive pulse t c =25[ o c] 10ms* 100ms* dc i c max. (pulsed*) i c max. (dc) i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 p c [w], power dissipation t c [ o c], case temperature
2sc5200/fjl4315 ? npn epit axial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. c 5 package dimensions 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] 4.90 0.20 20.00 0.20 (8.30) (8.30) (1.00) (0.50) (2.00 ) (7.00) (r1.00) (r2.00) ?.30 0.20 (7.00) (1.50) (1.50) (1.50) 2.50 0.20 3.00 0.20 2.80 0.3 0 1.00 +0.25 ?.10 0.60 +0.25 ?.10 1.50 0.20 6.00 0.20 20.00 0.20 20.00 0.50 5.00 0.20 3 .50 0.20 2.50 0.10 (9.00) (9.00) (2.00) ( 1.50) (0.15) ( 2.80) (4.00) (11.00) to-264 dimensions in millimeters
2sc5200/fjl4315 npn epit axial silicon transistor 2sc5200/fjl4315 ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. c 6
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